The presence of CuGaSe2 interface layer in the growth of Cu-rich CuInSe2/GaAs(0 0 1) epitaxial films
Identifieur interne : 002292 ( Main/Repository ); précédent : 002291; suivant : 002293The presence of CuGaSe2 interface layer in the growth of Cu-rich CuInSe2/GaAs(0 0 1) epitaxial films
Auteurs : RBID : Pascal:11-0133527Descripteurs français
- Pascal (Inist)
- Interface, Mécanisme croissance, Arséniure de gallium, Semiconducteur III-V, Composé III-V, Couche épitaxique, Epitaxie jet moléculaire, Effet température, Diffraction RX, Gallium, Diffusion(transport), Sulfure de cuivre, Microscopie électronique balayage transmission, Spectrométrie dispersive, Séléniure de cuivre, Séléniure de gallium, Cuivre, Chalcopyrite, Cuivre Indium Séléniure Mixte, Dépendance température, Couche mince, CuGaSe2, CuInSe2, GaAs, Substrat GaAs, Cu2S, 8110A, 8115H, 6630.
- Wicri :
- concept : Cuivre.
English descriptors
- KwdEn :
- Chalcopyrite, Copper, Copper Indium Selenides Mixed, Copper selenides, Copper sulfide, Diffusion, Dispersive spectrometry, Epitaxial layers, Gallium, Gallium arsenides, Gallium selenides, Growth mechanism, III-V compound, III-V semiconductors, Interfaces, Molecular beam epitaxy, Scanning transmission electron microscopy, Temperature dependence, Temperature effects, Thin films, XRD.
Abstract
The Cu-rich CuInSe2 (CIS) epitaxial films with y=[Cu]/[In]=1.65 are grown on GaAs(0 0 1) substrates using the MBE technique at substrate temperatures ranging from 400 to 600 °C. The unusual background and broad peaks in the XRD spectra are found at 2θ between 67° and 69°, which are not accounted for any crystal planes of the CIS. They also cannot be removed using the KCN solution and are not observed in the stoichiometric (y= 1) CIS epitaxial films, suggesting that there exists some other relatively thin epitaxial structures at the interface of the CIS and the GaAs(0 0 1). The broad peaks are found to be in the vicinity of the (0 0 8) crystal plane of the CuGaSe2 (CGS) even if the Ga flux is not allowed during the growth of CIS. The interface layer is believed to be CGS formed by the diffusion of the excess Cu2-xSe and Ga atoms at the surface of the GaAs substrate. The formation ofthe CGS interface layer is directly verified by STEM images and the composition of Cu:Ga:Se obtained from the EDS measurement is approximately 1.1:1.0:2.0. The thickness of the CGS interface layer is dependent on the substrate temperature and found to occur when the substrate temperature is approximately higher than 430 °C.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The presence of CuGaSe<sub>2</sub> interface layer in the growth of Cu-rich CuInSe<sub>2</sub>/GaAs(0 0 1) epitaxial films</title><author><name sortKey="Arthibenyakul, B" uniqKey="Arthibenyakul B">B. Arthibenyakul</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Faculty of Science, Chulalongkorn University</s1><s2>Bangkok 10300</s2><s3>THA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Thaïlande</country><wicri:noRegion>Bangkok 10300</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Research Center in Thin Film Physics, Thailand Center of Excellence in Physics, CHE, 328 Si Ayutthaya Rd.</s1><s2>Bangkok 10400</s2><s3>THA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Thaïlande</country><wicri:noRegion>Bangkok 10400</wicri:noRegion></affiliation></author><author><name sortKey="Chityuttakan, C" uniqKey="Chityuttakan C">C. Chityuttakan</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Faculty of Science, Chulalongkorn University</s1><s2>Bangkok 10300</s2><s3>THA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Thaïlande</country><wicri:noRegion>Bangkok 10300</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Research Center in Thin Film Physics, Thailand Center of Excellence in Physics, CHE, 328 Si Ayutthaya Rd.</s1><s2>Bangkok 10400</s2><s3>THA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Thaïlande</country><wicri:noRegion>Bangkok 10400</wicri:noRegion></affiliation></author><author><name sortKey="Chatraphorn, S" uniqKey="Chatraphorn S">S. Chatraphorn</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Faculty of Science, Chulalongkorn University</s1><s2>Bangkok 10300</s2><s3>THA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Thaïlande</country><wicri:noRegion>Bangkok 10300</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Research Center in Thin Film Physics, Thailand Center of Excellence in Physics, CHE, 328 Si Ayutthaya Rd.</s1><s2>Bangkok 10400</s2><s3>THA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Thaïlande</country><wicri:noRegion>Bangkok 10400</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0133527</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0133527 INIST</idno><idno type="RBID">Pascal:11-0133527</idno><idno type="wicri:Area/Main/Corpus">003530</idno><idno type="wicri:Area/Main/Repository">002292</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chalcopyrite</term><term>Copper</term><term>Copper Indium Selenides Mixed</term><term>Copper selenides</term><term>Copper sulfide</term><term>Diffusion</term><term>Dispersive spectrometry</term><term>Epitaxial layers</term><term>Gallium</term><term>Gallium arsenides</term><term>Gallium selenides</term><term>Growth mechanism</term><term>III-V compound</term><term>III-V semiconductors</term><term>Interfaces</term><term>Molecular beam epitaxy</term><term>Scanning transmission electron microscopy</term><term>Temperature dependence</term><term>Temperature effects</term><term>Thin films</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Interface</term><term>Mécanisme croissance</term><term>Arséniure de gallium</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Couche épitaxique</term><term>Epitaxie jet moléculaire</term><term>Effet température</term><term>Diffraction RX</term><term>Gallium</term><term>Diffusion(transport)</term><term>Sulfure de cuivre</term><term>Microscopie électronique balayage transmission</term><term>Spectrométrie dispersive</term><term>Séléniure de cuivre</term><term>Séléniure de gallium</term><term>Cuivre</term><term>Chalcopyrite</term><term>Cuivre Indium Séléniure Mixte</term><term>Dépendance température</term><term>Couche mince</term><term>CuGaSe2</term><term>CuInSe2</term><term>GaAs</term><term>Substrat GaAs</term><term>Cu2S</term><term>8110A</term><term>8115H</term><term>6630</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Cuivre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The Cu-rich CuInSe<sub>2</sub> (CIS) epitaxial films with y=[Cu]/[In]=1.65 are grown on GaAs(0 0 1) substrates using the MBE technique at substrate temperatures ranging from 400 to 600 °C. The unusual background and broad peaks in the XRD spectra are found at 2θ between 67° and 69°, which are not accounted for any crystal planes of the CIS. They also cannot be removed using the KCN solution and are not observed in the stoichiometric (y= 1) CIS epitaxial films, suggesting that there exists some other relatively thin epitaxial structures at the interface of the CIS and the GaAs(0 0 1). The broad peaks are found to be in the vicinity of the (0 0 8) crystal plane of the CuGaSe<sub>2</sub> (CGS) even if the Ga flux is not allowed during the growth of CIS. The interface layer is believed to be CGS formed by the diffusion of the excess Cu<sub>2-x</sub>Se and Ga atoms at the surface of the GaAs substrate. The formation ofthe CGS interface layer is directly verified by STEM images and the composition of Cu:Ga:Se obtained from the EDS measurement is approximately 1.1:1.0:2.0. The thickness of the CGS interface layer is dependent on the substrate temperature and found to occur when the substrate temperature is approximately higher than 430 °C.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>316</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>The presence of CuGaSe<sub>2</sub> interface layer in the growth of Cu-rich CuInSe<sub>2</sub>/GaAs(0 0 1) epitaxial films</s1></fA08><fA11 i1="01" i2="1"><s1>ARTHIBENYAKUL (B.)</s1></fA11><fA11 i1="02" i2="1"><s1>CHITYUTTAKAN (C.)</s1></fA11><fA11 i1="03" i2="1"><s1>CHATRAPHORN (S.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Faculty of Science, Chulalongkorn University</s1><s2>Bangkok 10300</s2><s3>THA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Research Center in Thin Film Physics, Thailand Center of Excellence in Physics, CHE, 328 Si Ayutthaya Rd.</s1><s2>Bangkok 10400</s2><s3>THA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>97-100</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000194405520200</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>12 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0133527</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The Cu-rich CuInSe<sub>2</sub> (CIS) epitaxial films with y=[Cu]/[In]=1.65 are grown on GaAs(0 0 1) substrates using the MBE technique at substrate temperatures ranging from 400 to 600 °C. The unusual background and broad peaks in the XRD spectra are found at 2θ between 67° and 69°, which are not accounted for any crystal planes of the CIS. They also cannot be removed using the KCN solution and are not observed in the stoichiometric (y= 1) CIS epitaxial films, suggesting that there exists some other relatively thin epitaxial structures at the interface of the CIS and the GaAs(0 0 1). The broad peaks are found to be in the vicinity of the (0 0 8) crystal plane of the CuGaSe<sub>2</sub> (CGS) even if the Ga flux is not allowed during the growth of CIS. The interface layer is believed to be CGS formed by the diffusion of the excess Cu<sub>2-x</sub>Se and Ga atoms at the surface of the GaAs substrate. The formation ofthe CGS interface layer is directly verified by STEM images and the composition of Cu:Ga:Se obtained from the EDS measurement is approximately 1.1:1.0:2.0. The thickness of the CGS interface layer is dependent on the substrate temperature and found to occur when the substrate temperature is approximately higher than 430 °C.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A10A</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A15H</s0></fC02><fC02 i1="03" i2="3"><s0>001B60F30</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Interface</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Interfaces</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Arséniure de gallium</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Composé III-V</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>III-V compound</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Couche épitaxique</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Epitaxial layers</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Effet température</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Temperature effects</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>XRD</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Gallium</s0><s2>NC</s2><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Gallium</s0><s2>NC</s2><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Diffusion(transport)</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Diffusion</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Sulfure de cuivre</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Copper sulfide</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Cobre sulfuro</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Microscopie électronique balayage transmission</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Scanning transmission electron microscopy</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Spectrométrie dispersive</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Dispersive spectrometry</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Espectrometría dispersiva</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Séléniure de cuivre</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Copper selenides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Séléniure de gallium</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Gallium selenides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Cuivre</s0><s2>NC</s2><s5>17</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Copper</s0><s2>NC</s2><s5>17</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Chalcopyrite</s0><s5>18</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Chalcopyrite</s0><s5>18</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Cuivre Indium Séléniure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>19</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Copper Indium Selenides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>19</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>19</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Dépendance température</s0><s5>29</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Temperature dependence</s0><s5>29</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Couche mince</s0><s5>30</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Thin films</s0><s5>30</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>CuGaSe2</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>CuInSe2</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>GaAs</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>Substrat GaAs</s0><s4>INC</s4><s5>49</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>Cu2S</s0><s4>INC</s4><s5>50</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>8110A</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>8115H</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>6630</s0><s4>INC</s4><s5>73</s5></fC03><fN21><s1>087</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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